4-261 telcom semiconductor, inc. 7 6 5 4 3 1 2 8 logic-input cmos quad drivers features n high peak output current ............................... 1.2a n wide operating range ............................ 4.5 to 18v n symmetrical rise and fall times ................ 25nsec n short, equal delay times ............................ 75nsec n latchproof! withstands 500ma inductive kickback n 3 input logic choices and / nand / and + inv n 2kv esd protection on all pins applications n general-purpose cmos logic buffer n driving all four mosfets in an h-bridge n direct small motor driver n relay or peripheral drivers n ccd driver n pin-switching network driver ordering information part no. package temp. range tc446xcoe 16-pin soic (wide) 0 to +70 c tc446xcpd 14-pin plastic dip 0 to +70 c tc446xejd 14-pin cerdip C 40 to +85 c tc446xmjd 14-pin cerdip C 55 to +125 c general description the tc446x family of four-output cmos buffer/drivers are an expansion from our earlier single- and dual-output drivers. each driver has been equipped with a two-input logic gate for added flexibility. the tc446x drivers can source up to 250 ma into loads referenced to ground. heavily loaded clock lines, coaxial cables, and piezoelectric transducers can all be easily driven with the 446x series drivers. the only limitation on loading is that total power dissipation in the ic must be kept within the power dissipation limits of the package. the tc446x series will not latch under any conditions within their power and voltage ratings. they are not subject to damage when up to 5v of noise spiking (either polarity) occurs on the ground line. they can accept up to half an amp of inductive kickback current (either polarity) into their out- puts without damage or logic upset. in addition, all terminals are protected against esd to at least 2000v. tc4467 TC4468 tc4469 x indicates a digit must be added in this position to define the device input configuration: tc446x 7 nand 8 and 9 and with inv logic diagrams TC4468 tc4467 output tc446x v dd v dd 14 7 1y 13 1 2 1b 1a 2y 12 3 4 2b 2a 3y 11 5 6 3b 3a 4y 10 8 9 4b 4a gnd tc4469 v dd 14 7 1y 13 1 2 1b 1a 2y 12 3 4 2b 2a 3y 11 5 6 3b 3a 4y 10 8 9 4b 4a gnd v dd 14 7 1y 13 1 2 1b 1a 2y 12 3 4 2b 2a 3y 11 5 6 3b 3a 4y 10 8 9 4b 4a gnd tc4467/8/9-6 10/21/96
4-262 telcom semiconductor, inc. logic-input cmos quad drivers tc4467 TC4468 tc4469 package thermal resistance 14-pin cerdip r q j-a ...................................... 100 c/w r q j-c ......................................... 23 c/w 14-pin plastic dip r q j-a ......................................... 80 c/w r q j-c ......................................... 35 c/w 16-pin wide soic r q j-a ......................................... 95 c/w r q j-c ......................................... 28 c/w *static-sensitive device. unused devices must be stored in conductive material. protect devices from static discharge and static fields. stresses above those listed under absolute maximum ratings may cause perma- nent damage to the device. these are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. symbol parameter test conditions min typ max unit input v ih logic 1, high input voltage note 3 2.4 v dd v v il logic 0, low input voltage note 3 0 0.8 v i in input current 0v v in v dd C 1 1 m a output v oh high output voltage i load = 100 m a (note 1) v dd C 0.025 v v ol low output voltage i load = 10ma (note 1) 0.15 v r o output resistance i out = 10ma, v dd = 18v 10 15 w i pk peak output current 1.2 a i dc continuous output current single output 300 ma total package 500 i latch-up protection 4.5v v dd 16v 500 ma withstand reverse current switching time t r rise time figure 1 15 25 nsec t f fall time figure 1 15 25 nsec t d1 delay time figure 1 40 75 nsec t d2 delay time figure 1 40 75 nsec power supply i s power supply current 1.5 4 ma v dd power supply voltage note 2 4.5 18 v electrical characteristics: measured at t a = +25 c with 4.5v v dd 18v, unless otherwise specified. truth table part no. tc4467 nand TC4468 and tc4469 and/inv inputs a h hl l hhll hhll inputs b h lh l hlhl hlhl outputs tc446x lhhh hlll lhll h = high l = low absolute maximum ratings* supply voltage ......................................................... +20v input voltage ......................... (gnd C 5v) to (v dd + 0.3v) maximum chip temperature operating ........................................................ +150 c storage ............................................. C 65 to +150 c maximum lead temperature (soldering, 10 sec) ......................................... +300 c operating ambient temperature range c device .................................................. 0 to +70 c e device ............................................. C 40 to +85 c m device ........................................... C 55 to +125 c package power dissipation (t a 70 c) 14-pin cerdip ................................................840mw 14-pin plastic dip ...........................................800mw 16-pin wide soic ..........................................760mw
4-263 telcom semiconductor, inc. 7 6 5 4 3 1 2 8 logic-input cmos quad drivers tc4467 TC4468 tc4469 symbol parameter test conditions min typ max unit input v ih logic 1, high input voltage (note 3) 2.4 v v il logic 0, low input voltage (note 3) 0.8 v i in input current 0v v in v dd C 10 10 m a output v oh high output voltage i load = 100 m a (note 1) v dd C 0.025 v v ol low output voltage i load = 10 ma (note 1) 0.30 v r o output resistance i out = 10 ma, v dd = 18v 20 30 w i pk peak output current 1.2 a i latch-up protection 4.5v v dd 16v 500 ma withstand reverse current switching time t r rise time figure 1 50 nsec t f fall time figure 1 50 nsec t d1 delay time figure 1 100 nsec t d2 delay time figure 1 100 nsec power supply i s power supply current 8 ma i s power supply voltage note 2 4.5 18 v electrical characteristics: measured throughout operating temperature range with 4.5v v dd 18v, unless otherwise specified. notes: 1. totem-pole outputs should not be paralleled because the propagation delay differences from one to the other could cause one d river to drive high a few nanoseconds before another. the resulting current spike, although short, may decrease the life of the device. 2. when driving all four outputs simultaneously in the same direction, v dd shall be limited to 16v. this reduces the chance that internal dv/dt will cause high-power dissipation in the device. 3. the input threshold has about 50 mv of hysteresis centered at approximately 1.5v. slow moving inputs will force the device to dissipate high peak currents as the input transitions through this band. input rise times should be kept below 5 m s to avoid high internal peak currents during input transitions. static input levels should also be maintained above the maximum or below the minimum in put levels specified in the "electrical characteristics" to avoid increased power dissipation in the device. pin configurations 1 2 3 4 5 6 7 14 13 12 11 10 9 8 1a 1b 2a 2b 3a 3b gnd v 1y 2y 3y 4y 4b 4a dd 1 2 3 4 5 6 7 8 16 13 12 11 10 9 1a 1b 2a 2b 3a 3b gnd gnd v 1y 2y 3y 4y 4b 4a dd v dd 15 14 tc4467/8/9 tc4467/8/9 16-pin soic (wide) 14-pin plastic dip/cerdip
4-264 telcom semiconductor, inc. logic-input cmos quad drivers tc4467 TC4468 tc4469 three components make up total package power dissipation: (1) load-caused dissipation (p l ) (2) quiescent power (p q ) (3) transition power (p t ). a capacitive-load-caused dissipation (driving mosfet gates), is a direct function of frequency, capacitive load, and supply voltage. the power dissipation is: p l = f c v s 2 , where: f = switching frequency c = capacitive load v s = supply voltage. a resistive-load-caused dissipation for ground-refer- enced loads is a function of duty cycle, load current, and load voltage. the power dissipation is: p l = d (v s C v l ) i l , where: d = duty cycle v s = supply voltage v l = load voltage i l = load current. a resistive-load-caused dissipation for supply-refer- enced loads is a function of duty cycle, load current, and output voltage. the power dissipation is: p l = d v o i l , where: f = switching frequency v o = device output voltage i l = load current. quiescent power dissipation depends on input signal duty cycle. logic high outputs result in a lower power dissipation mode, with only 0.6 ma total current drain (all devices driven). logic low outputs raise the current to 4 ma maximum. the quiescent power dissipation is: p q = v s (d (ih) + (1Cd)i l ), where: i h = quiescent current with all outputs low (4 ma max) i l = quiescent current with all outputs high (0.6 ma max) d = duty cycle v s =supply voltage. supply bypassing large currents are required to charge and discharge large capacitive loads quickly. for example, charging a 1000 pf load to 18v in 25nsec requires 0.72a from the device's power supply. to guarantee low supply impedance over a wide fre- quency range, a 1 m f film capacitor in parallel with one or two low-inductance 0.1 m f ceramic disk capacitors with short lead lengths (<0.5 in.) normally provide adequate bypass- ing. grounding the tc4467 and tc4469 contain inverting drivers. potential drops developed in common ground impedances from input to output will appear as negative feedback and degrade switching speed characteristics. instead, individual ground returns for input and output circuits, or a ground plane, should be used. input stage the input voltage level changes the no-load or quies- cent supply current. the n-channel mosfet input stage transistor drives a 2.5 ma current source load. with logic "0" outputs, maximum quiescent supply current is 4 ma. logic "1" output level signals reduce quiescent current to 1.4 ma maximum. unused driver inputs must be connected to v dd or v ss . minimum power dissipation occurs for logic "1" outputs. the drivers are designed with 50 mv of hysteresis. this provides clean transitions and minimizes output stage cur- rent spiking when changing states. input voltage thresholds are approximately 1.5v, making any voltage greater than 1.5v up to v dd a logic 1 input . input current is less than 1 m a over this range. power dissipation the supply current versus frequency and supply current versus capacitive load characteristic curves will aid in deter- mining power dissipation calculations. telcom semicon- ductor's cmos drivers have greatly reduced quiescent dc power consumption. input signal duty cycle, power supply voltage and load type, influence package power dissipation. given power dissipation and package thermal resistance, the maximum ambient operating temperature is easily calculated. the 14- pin plastic package junction-to-ambient thermal resistance is 83.3 c/w. at +70 c, the package is rated at 800mw maximum dissipation. maximum allowable chip tempera- ture is +150 c.
4-265 telcom semiconductor, inc. 7 6 5 4 3 1 2 8 logic-input cmos quad drivers tc4467 TC4468 tc4469 maximum operating temperature: t j C q ja (p d ) = 141 c, where: t j = maximum allowable junction temperature (+150 c) q ja = junction-to-ambient thermal resistance (83.3 c/w) 14-pin plastic package. note: ambient operating temperature should not exceed +85 c for "ejd" device or +125 c for "mjd" device. figure 1. switching time test circuit v out 1b 1a 2b 2a 3b 3a 4b 4a 1 ? film 0.1 ? ceramic v dd 470 pf 90% 10% 10% 10% t d1 t r t d2 t f 90% +5v input (a, b) v dd output 0v 0v 90% 1 2 3 4 5 6 8 9 7 10 11 12 13 14 input: 100 khz, square wave, t rise = t fall 10nsec transition power dissipation arises in the complementary configuration (tc446x) because the output stage n-channel and p-channel mos transistors are on simultaneously for a very short period when the output changes. the transition power dissipation is approximately: p t = f v s (10 3 10 C9 ). package power dissipation is the sum of load, quies- cent and transition power dissipations. an example shows the relative magnitude for each term: c = 1000 pf capacitive load v s = 15v d = 50% f = 200 khz p d = package power dissipation = p l + p q + p t = 45 mw + 35 mw + 30 mw = 110 mw.
4-266 telcom semiconductor, inc. logic-input cmos quad drivers tc4467 TC4468 tc4469 typical characteristics 140 120 100 80 60 40 20 0 3 5 7 9 11 13 15 17 19 v (v) supply 2200 pf 1600 pf 1000 pf 470 pf 100 pf t (nsec) (rise) rise time vs. supply voltage 140 120 100 80 60 40 20 0 3 5 7 9 11 13 15 17 19 v (v) supply t (nsec) (fall) 100 pf 470 pf 1000 pf 1500 pf 2200 pf fall time vs. supply voltage 140 120 100 80 60 40 20 0 100 1000 10,000 c (pf) load t (nsec) (rise) 10v 15v 5v rise time vs. capacitive load 140 120 100 80 60 40 20 0 100 1000 10,000 c (pf) load t (nsec) (fall) 5v 10v 15v fall time vs. capacitive load 0 ?0 temperature ( c) time (nsec) 5 10 15 20 25 ?5 0 25 50 75 100 125 t v = 17.5v c = 470 pf t supply load (fall) (rise) rise/fall times vs. temperature 0 4 delay time (nsec) 20 40 60 80 812141618 610 v (v) supply t c = 470 pf load d1 propagation delay time vs. supply voltage t d2
4-267 telcom semiconductor, inc. 7 6 5 4 3 1 2 8 logic-input cmos quad drivers tc4467 TC4468 tc4469 typical characteristics (cont.) 140 120 100 80 60 40 20 0 19 10 v (v) drive delay time (nsec) 2345678 input falling t t input rising v = 12v dd d1 d2 input amplitude vs. delay times 70 20 100 120 temperature ( c) delay time (nsec) ?0 ?0 0 20 40 60 80 30 40 50 60 v = 17.5v c = 470 pf v = 0, 5v dd load in t t d1 d2 propagation delay times vs. temperature ?0 0 4 0.5 1.0 1.5 2.0 2.5 6 8 10 12 14 16 18 v supply (v) i (ma) quiescent quiescent supply current vs. supply voltage 3.5 0 100 120 t ( c) ?0 ?0 0 20 40 60 80 3.0 2.5 2.0 1.5 1.0 0.5 i (ma) quiescent v = 17.5v dd outputs high outputs low junction quiescent supply current vs. temperature ?0 0 4 6 8 1012141618 v supply (v) 5 10 15 20 25 30 35 t = +150 c t = +25 c r ( ) w ds(on) j high-state output resistance j 0 4 6 8 10 12 14 16 18 5 10 15 20 25 30 35 t = +150 c t = +25 c j j low-state output resistance v supply (v) r ( ) w ds(on) outputs = 1 outputs = 0
4-268 telcom semiconductor, inc. supply current characteristics (load on single output only) 60 0 100 1000 10,000 c (pf) load 50 40 30 20 10 2 mhz 1 mhz 500 khz 200 khz 20 khz i (ma) supply v = 18v dd supply current vs. capacitive load 60 0 100 1000 frequency (khz) 50 40 30 20 10 i (ma) supply v = 18v dd 2200 pf 1000 pf 100 pf 10 supply current vs. frequency 10,000 60 0 100 1000 10,000 50 40 30 20 10 c (pf) load i (ma) supply v = 12v dd 2 mhz 1 mhz 500 khz 200 khz 20 khz supply current vs. capacitive load 60 0 10 100 frequency (khz) 50 40 30 20 10 1000 i (ma) supply 2200 pf 1000 pf 100 pf v = 12v dd supply current vs. frequency 10,000 60 50 40 30 20 10 0 100 1000 10,000 c (pf) load i (ma) supply 1 mhz 500 khz 200 khz 20 khz 2 mhz v = 6v dd supply current vs. capacitive load 60 0 10 1000 100 frequency (khz) 50 40 30 20 10 i (ma) supply v = 6v dd 2200 pf 1000 pf 100 pf supply current vs. frequency 10,000 logic-input cmos quad drivers tc4467 TC4468 tc4469
4-269 telcom semiconductor, inc. 7 6 5 4 3 1 2 8 typical applications 4.7 k w tc4469 48-volt, 3-phase brushless output stage 1 2 3 4 5 6 8 9 1b 2a 2b 3a 3b 4a 4b 1y 2y 3y 4y gnd u1 13 12 11 10 tc4469 1 2 3 4 5 6 8 9 1a 1b 2a 2b 3a 3b 4a 4b 1y 2y 3y 4y 13 12 11 10 48v 14 7 15v 14 7 gnd v dd r4 3.3 k w d2 d3 d4 r1 3.3 k w 5w r9 r10 r11 q1 q2 q3 2n5550 2n5550 2n5550 1a a+ b+ c+ a b c c1 1 ? d1 1n4744 15v r2 3.3 k w r3 3.3 k w motor motor motor 4.7 k w 4.7 k w u2 v dd phase a phase b phase c (float at 33v) r7 r6 r5 +12v 14 7 1 2 stepper motor drive tc4469 13 3 4 12 5 6 11 8 9 10 a b +5v to +15v 14 quad driver for h-bridge motor control tc4469 direction pwm speed 18v fwd 13 12 11 10 7 9 8 6 5 4 3 2 1 rev motor motor m red gray yel blk airpax #m82102-p2 7.5 /step logic-input cmos quad drivers tc4467 TC4468 tc4469
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